| PART |
Description |
Maker |
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MPSH10 MPSH11 ON2346 MPSH10-D |
VHF/UHF Transistors NPN Silicon
CASE 294, STYLE 2 TO2 (TO26AA)
From old datasheet system
VHF/UHF Transistors(NPN Silicon)
(MPSH10 / MPSH11) VHF/UHF Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S |
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
ROHM
|
| MSD601-ST1 MSD601-RT1 ON2380 MSD601RT1 |
NPN General Purpose Amplifier Transistors Surface Mount
From old datasheet system
CASE 318D3, STYLE 1 SC9
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
